Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

Texas Instruments Inc. (TI) has expanded its low-power gallium nitride (GaN) portfolio, with a new family of GaN field-effect transistors (FETs). These GaN FET devices can improve power density and ...

Onsemi, an intelligent power and sensing corporations, said on the 4th that it signed a memorandum of understanding (MOU) with Innosience and will move to target the low- to mid-voltage (40–200V) ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

At the Applied Power Electronics Conference & Exposition (APEC 2025), celebrating its 40th year, over 300 exhibitors showcased their latest component advances for system power designers across a wide ...

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...

TOKYO, Oct. 13, 2025 ― Renesas Electronics Corporation (TSE:6723), a supplier of semiconductor solutions, announced that it is supporting efficient power conversion and distribution for the 800 Volt ...

EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 A Pulsed, rad-hard GaN FET in a small 6.56 mm 2 ...

EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the introduction of the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100 V, 3.9 mΩ, 345 A Pulsed, rad-hard GaN FET in a small 13.9 mm 2 ...