High Electron Mobility Transistors (HEMTs) represent a pivotal class of devices in modern semiconductor technology, valued for their exceptional frequency performance and low noise characteristics.

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped indium ...

For decades, the semiconductor industry has been laser-focused on shrinking silicon transistors, but Peking University researchers believe the future might lie in changing materials entirely. In a ...

Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Infineon Technologies AG has launched the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, based on its CoolGan technology. Complementing the company’s ...

Researchers demonstrated a way to manipulate electrons in graphene using pulses of light that last less than one thousands trillionth (one quadrillionth) of a second. By leveraging a quantum effect ...

From AI-powered processors to atomic-scale transistors, the world of microelectronics is continually being redefined by how small, how powerful, and how energy-efficient devices can become. Whether it ...

High electron mobility transistors (HEMTs) have emerged as pivotal devices in the field of electronic sensing owing to their intrinsic ability to support a high-mobility two‐dimensional electron gas.