In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
This FM broadcast rf amplifier is built with 2SC2539 which is a silicon NPN epitaxal planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. It can deliver up to ...
Radio frequency (RF) power amplifiers are all over the place. Some of them can deliver enough RF output power to do biological harm to somebody. Many such amplifiers are solid state, but many others ...
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