The following is a special guest post by Dr. Chenming Hu, TSMC Distinguished Professor at UC Berkeley. He and his team published seminal papers on FinFETs (1999) and UTB-SOI (2000). This post first ...
A number of silicon-on-insulator process variations have been discussed and implemented for years. Will the fully depleted variant find widespread use in the IoT. Silicon-on-insulator manufacturing ...
A CMOS 28nm fully depleted silicon-on-insulator (FD-SOI) process devised by STMicroelectronics (using silicon substrates from Soitec) is now available for prototyping to universities, research labs, ...
Globalfoundries (Santa Clara, Calif.) claims its 22FDX platform delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies. It will be a boon to the ...
Samsung Electronics and STMicroelectronics, one of Europe's largest semiconductor corporations, have been expanding their FD-SOI (fully depleted silicon on insulator) technology cooperation, which ...
Wafer foundry houses in China have stepped up efforts to develop Fully Depleted Silicon-on-Insulator (FD-SOI), or also called Ultra-Thin Body (UTB), processes for wafer production, compared to the Fin ...
SANTA CLARA, Calif.--(BUSINESS WIRE)--GLOBALFOUNDRIES today unveiled a new 12nm FD-SOI semiconductor technology, extending its leadership position by offering the industry’s first multi-node FD-SOI ...
Lattice Semiconductor is well-known for its low-power, flash-based FPGAs. One of the applications the company has targeted is interfacing between devices. The CrossLink-NX FPGA is designed to provide ...
As industry roadmaps push for lower power budgets and greater integration, SOI is emerging as a strategic platform for next-generation microelectronics. Over 60% of smartphones and 80% of gaming ...
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