Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...
Abstract: This paper presents a 28nm CMOS wireless connectivity combo IC with a 2×2 reconfigurable WiFi transceiver, and a BT 5.0 slim SOC. The WiFi transceiver can deliver 2G/5G Psat of 26.5/25.5dBm ...
Abstract: A vertical channel gate-all-around (VCG) device process was proposed on the CMOS platform. As the key technology for integrated process, the active area stacks by MBE and dopants ...
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