Research is actively underway to develop a "dream memory" that can reduce heat generation in smartphones and laptops while delivering faster performance and lower power consumption. Korean researchers ...
Morning Overview on MSN
China claims sub-1 nm transistor that cuts power use for AI chips
A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...
Scientists from the University of New South Wales (UNSW) in Australia have investigated the impact of electron irradiation on the performance of p-PERC, n-TOPCon and p-TOPCon solar cells and have ...
Abstract: This study investigates the effects of high-energy electron irradiation on AlGaN/GaN high electron mobility transistors (HEMTs). The results show that high-energy electron irradiation with a ...
Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...
For decades, silicon has ruled as the undisputed leader in power electronics. But as silicon hits its performance limits, gallium-nitride (GaN) power devices are gaining ground. With faster switching ...
High electron mobility transistors (HEMTs) have emerged as pivotal devices in the field of electronic sensing owing to their intrinsic ability to support a high-mobility two‐dimensional electron gas.
Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...
Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China ...
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