Researchers from the University of Science and Technology of China (USTC) and collaborators have manufactured a high-performance normally-off diamond p-FET featuring high-density 2D hole gas (HG) with ...

You’ve just finished assembling an electronic project and are ready to power it up, only to realize the battery might be connected backwards. In an instant, a simple mistake can destroy hours of work.

The 5 th generation MOSFET platform features Navitas’ most compact TAP architecture yet, combining the ruggedness of a planar gate with best-in-class performance figures of merit enabled by a trench ...

Hi, I'm Bill. I'm a software developer with a passion for making and electronics. I do a lot of things and here is where I document my learning in order to be able to inspire other people to make ...

Following the U.S. SEC’s approval of the Bitcoin Spot ETF and Ethereum ETF, altcoins have gained momentum. Additionally, ...

P-channel power MOSFETs are now part of Infineon Technologies’ mix of radiation-tolerant MOSFETs for low-Earth-orbit (LEO) systems. Included in the company’s expanding portfolio of devices for ...

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...

Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster ...

NANJING, China--(BUSINESS WIRE)--Today, SMC Diode Solutions, an American-led semiconductor design and manufacturing company, celebrated the opening of its second power discrete fab in Nanjing, China.

Abstract: A novel structure of retrograde p-well Schottky source MOSFET with integrated Si/SiGe heterojunction diode (RP-HJD-S-MOS) is proposed by introducing a p-SiGe region at the center of the ...